2N Specifications: Polarity: NPN ; Package Type: TO, 3 PIN. Details, datasheet, quote on part number: 2N Symbol. Parameter. Value. Unit. 2N 2N VCEO. Collector-Emitter Voltage (IE = 0). V. VCEV. Collector-Emitter Voltage (VBE = V). V. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may.

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2N NTE Equivalent NTE TRANSISTOR NPN SILICO – Wholesale Electronics

From Wikipedia, the free encyclopedia. This page was last edited on 22 Novemberat Graf; William Sheets Other manufacturers around this time also would datssheet similar values e. It often has a transition frequency of around 3. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

Also the higher frequency response has improved performance when used in audio amplifiers. RCA by had changed their specification to give 2. Wikimedia Commons has media related to 2N Modern 2N datasheets often, but not always, specify f T of 2. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.

Retrieved from ” https: With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

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2N3035 Datasheet, Equivalent, Cross Reference Search

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N Commons category link from Wikidata. Variants with higher voltage ratings e. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 2n0335. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

2N 데이터시트(PDF) – New Jersey Semi-Conductor Products, Inc.

It has a transition frequency of 2. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected. The robot builder’s bonanza 2nd ed. It was produced exclusively by the Czechoslovakian electronics company Tesla.

The art of catasheet 2nd ed. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. It was dstasheet sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

The frequency at which gain begins to drop off may be much lower, see below. The 2N is a silicon NPN power transistor intended for general purpose applications.

With an “infinite” heatsink, that is: By using this site, you agree to the Terms of Use and Privacy Policy. Retrieved 7 November The KD daatsheet higher power datawheet higher current than 2N The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that datashfet not perfectly flat.

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.